Vishal Yeddu Gijun Seo Matthew Bamidele Hyocheol Jung 유형근 Jae Woong Lee Jihoon Lee Do Young Kim 2024-01-19T12:32:56Z 2024-01-19T12:32:56Z 2022-01-10 2022-03 1944-8244 https://pubs.kist.re.kr/handle/201004/115611 Visible and near-infrared broadband photodetectors with multispectral photosensitivity from 300 to 1100 nm were fabricated using the low-band-gap mixed Pb-Sn halide perovskites. A solution-processed nickel oxide (NiOx) thin film was used as the electron-blocking layer in the mixed Pb-Sn low-band-gap perovskite photodetector instead of the commonly used PEDOT:PSS because NiOx has a wider band gap and a shallow conduction band edge compared to PEDOT:PSS. There is no significant difference in the film qualities such as surface roughness, grain size, and crystallinity between polycrystalline perovskite films formed on PEDOT:PSS and NiOx. A NiOx electron blocker significantly reduces (more than 100 times) the dark currents of perovskite photodetectors without sacrificing the photocurrent extraction, resulting in a 10-fold increase in detectivity. Finally, mixed Pb-Sn halide perovskite photodetectors with NiOx as an electron blocker show the detectivity value higher than 1 x 10(12) Jones from 320 to 1020 nm and the maximum detectivity value of 5 x 10(12) Jones at the peak wavelength of 940 nm. This is comparable with the detectivity values of the commercially available silicon-based visible and near-infrared broadband photodetectors. English American Chemical Society High detectivity UV-visible-NIR broadband perovskite photodetector using Pb-Sn mixed narrow-gap absorber and NiOx electron blocker Article 10.1021/acsaelm.1c01264 1 ACS Applied Materials & Interfaces, v.22, no.3, pp.1206 - 1213 ACS Applied Materials & Interfaces 22 3 1206 1213 N scie scopus 000795896500035 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Engineering Materials Science Article infrared photodetector high detectivity Pb-Sn perovskite narrow band gap electron-blocking layer