Gramuglia, F.
Keshavarzian, P.
Kizilkan, E.
Bruschini, C.
Tan, S.S.
Tng, M.
Quek, E.
Lee, M.
Charbon, E.
2024-01-19T12:33:00Z
2024-01-19T12:33:00Z
2022-01-10
2022-03
1077-260X
https://pubs.kist.re.kr/handle/201004/115615
CMOS single-photon avalanche diodes (SPADs) have broken into the mainstream by enabling the adoption of imaging, timing, and security technologies in a variety of applications within the consumer, medical and industrial domains. The continued scaling of technology nodes creates many benefits but also obstacles for SPAD-based systems. Maintaining and/or improving upon the high-sensitivity, low-noise, and timing performance of demonstrated SPADs in custom technologies or well-established CMOS image sensor processes remains a challenge. In this paper, we present SPADs based on DPW/BNW junctions in a standard Bipolar-CMOS-DMOS (BCD) technology with results comparable to the state-of-the-art in terms of sensitivity and noise in a deep sub-micron process. Technology CAD (TCAD) simulations demonstrate the improved PDP with the simple addition of a single existing implant, which allows for an engineered performance without modifications to the process. The result is an 8.8 μm diameter SPAD exhibiting ~2.6 cps/μm<formula> <tex>$^{2}$</tex> </formula> DCR at 20°C with 7 V excess bias. The improved structure obtains a PDP of 62 % and ~4.2 % at 530 nm and 940 nm, respectively. Afterpulsing probability is ~0.97 % and the timing response is 52 ps FWHM when measured with integrated passive quench/active recharge circuitry at 3V excess bias. Author
English
Institute of Electrical and Electronics Engineers Inc.
Engineering Breakdown Probability Profile for PDP and DCR Optimization in a SPAD Fabricated in a Standard 55nm BCD Process
Article
10.1109/JSTQE.2021.3114346
1
IEEE Journal of Selected Topics in Quantum Electronics, v.28, no.2
IEEE Journal of Selected Topics in Quantum Electronics
28
2
N
scie
scopus
000743792100001
2-s2.0-85115701474
Engineering, Electrical & Electronic
Quantum Science & Technology
Optics
Physics, Applied
Engineering
Physics
Optics
Article
Avalanche diodes
CMOS integrated circuits
Electronic design automation
Medical imaging
Optical radar
Particle beams
Photons
Timing circuits
3-D ranging
Bipolar-CMOS-DMOS
Depth sensing
FLIM
Implant
Junction
Photon counting
QRNG
Single photon avalanche diode
Single-photon avalanche diode
Three-dimensional (3-D) ranging
Time-correlated single photon counting
Image enhancement
BCD
depth-sensing
Doping
Electric breakdown
FLIM
Implants
Junctions
LIDAR
Photon counting
Photonics
QRNG
Single-photon avalanche diodes
Single-photon avalanche diodes (SPADs)
three-dimensional (3-D) ranging
time-correlated single-photon counting(TCSPC)
Timing