Kim, Jenam Kim, Byung Seok Lee, Ae Jin Han, Dong Hee Hwang, Ji Hyeon Kim, Youngjin Song, Ki-Chang Oh, Hansol Kim, Sangho Park, Yongjoo Jeon, Woojin 2024-01-19T12:33:21Z 2024-01-19T12:33:21Z 2022-04-03 2022-02-01 0272-8842 https://pubs.kist.re.kr/handle/201004/115636 A Y-doped HfO2 thin film deposited using a cocktail precursor for a DRAM capacitor dielectric application was investigated. It has been difficult to adapt HfO2, a potential high-dielectric-constant material, deposited by a typical thin-film deposition technique to actual devices owing to its low dielectric constant of approximately 20, resulting from its monoclinic-phase crystal structure. Although several methods have been investigated to increase the dielectric constant by crystal structure transformation to the tetragonal phase, which has a dielectric constant as high as approximately 40, the formation of the monoclinic phase was not successfully suppressed. In this study, the tetragonal-phase formation of HfO2 thin films was investigated using a cocktail precursor consisting of Y and Hf precursors. The monoclinic formation suppression mechanism in the Y-doped HfO2 thin film was determined from the physical and chemical analyses results. Moreover, the leakage current change caused by the introduced oxygen vacancy with respect to the Y dopant concentration was investigated. Improved electrical properties of the dielectric constant and leakage current were achieved with Y-doped HfO2. English ELSEVIER SCI LTD THIN-FILMS ELECTRICAL-PROPERTIES GATE DIELECTRICS TETRAGONAL HFO2 OXIDES ZRO2 MICROSTRUCTURE TRANSFORMATION STABILIZATION ZIRCONIUM Y-doped HfO2 deposited by atomic layer deposition using a cocktail precursor for DRAM capacitor dielectric application Article 10.1016/j.ceramint.2021.10.097 1 CERAMICS INTERNATIONAL, v.48, no.3, pp.3236 - 3242 CERAMICS INTERNATIONAL 48 3 3236 3242 scie scopus 000735283800006 2-s2.0-85120679409 Materials Science, Ceramics Materials Science Article THIN-FILMS ELECTRICAL-PROPERTIES GATE DIELECTRICS TETRAGONAL HFO2 OXIDES ZRO2 MICROSTRUCTURE TRANSFORMATION STABILIZATION ZIRCONIUM Hafnium oxide Yttrium oxide Cocktail precursor Atomic layer deposition Insulator Oxygen vacancy Phase transformation Dopant