Kim, Hyuk Jin Nguyen Van Quang Thi Huong Nguyen Kim, Sera Yangjin, Lee Lee, In Hak Cho, Sunglae Seong, Maeng-Je Kim, Kwanpyo Chang, Young Jun 2024-01-19T12:33:43Z 2024-01-19T12:33:43Z 2022-04-05 2022-02 1931-7573 https://pubs.kist.re.kr/handle/201004/115658 Transition metal dichalcogenides have attracted renewed interest for use as thermoelectric materials owing to their tunable bandgap, moderate Seebeck coefficient, and low thermal conductivity. However, their thermoelectric parameters such as Seebeck coefficient, electrical conductivity, and thermal conductivity are interdependent, which is a drawback. Therefore, it is necessary to find a way to adjust one of these parameters without affecting the other parameters. In this study, we investigated the effect of helium ion irradiation on MoSe2 thin films with the objective of controlling the Seebeck coefficient and electrical conductivity. At the optimal irradiation dose of 10(15) cm(-2), we observed multiple enhancements of the power factor resulting from an increase in the electrical conductivity, with slight suppression of the Seebeck coefficient. Raman spectroscopy, X-ray diffraction, and transmission electron microscopy analyses revealed that irradiation-induced selenium vacancies played an important role in changing the thermoelectric properties of MoSe2 thin films. These results suggest that helium ion irradiation is a promising method to significantly improve the thermoelectric properties of two-dimensional transition metal dichalcogenides. English Springer Verlag Tuning of Thermoelectric Properties of MoSe2 Thin Films Under Helium Ion Irradiation Article 10.1186/s11671-022-03665-9 1 Nanoscale Research Letters, v.17, no.1 Nanoscale Research Letters 17 1 Y scie scopus 000753866000001 2-s2.0-85124805770 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article CONDUCTIVITY VACANCIES LAYERS MoSe2 Helium ion irradiation Thermoelectric property Seebeck coefficient