Choi, Sungwon Ahn, Jongtae Ahn, Il-Ho Hwang, Do Kyung Park, Min-Chul 2024-01-19T12:33:55Z 2024-01-19T12:33:55Z 2022-04-05 2022-02 0146-9592 https://pubs.kist.re.kr/handle/201004/115670 We report the performance of a MoS2 Schottky diode on three-dimensional (3D) integral imaging. The MoS2 Schottky diode has asymmetric Pt electrodes for the Schottky contact and Ti/Au electrodes for the ohmic contact. Such a Schottky diode exhibits an excellent rectification ratio of 103, a broad spectral photoresponse in the 450–700 nm range, an almost ideal linearity of 1, and a wide linear dynamic range of 106 dB. We successfully conduct object pickup experiments using integral imaging and validate the feasibility of a single-pixel imager as a 3D image sensor. English Optical Society of America Integral imaging using a MoS2 Schottky diode Article 10.1364/OL.449559 1 Optics Letters, v.47, no.4, pp.866 - 869 Optics Letters 47 4 866 869 N scie scopus 000756709400034 2-s2.0-85124626022 Optics Optics Article DISPLAY