Kim, K. H. Kim, T. G. Lee, S. Jhon, Y. M. Kim, S. H. Byun, Y. T. 2024-01-19T12:38:05Z 2024-01-19T12:38:05Z 2022-03-07 2011 0094-243X https://pubs.kist.re.kr/handle/201004/115719 In this paper, we investigated a novel method of selectively assembling single-walled carbon nonotubes (SWCNTs) on a silicon (Si) substrate. These SWCNT arrays were fabricated by using only a photolithographic process. Using this technique, SWCNTs could be absorbed on the Si substrate surface without complicated chemical steps. As a result, we successfully fabricated SWCNT-based multi-channel patterns. The unmanageable SWCNTs could be easily obsorbed on the SiO2 surface. This is to advance one step further from the conventional self-assembled process using octadecyltrichorosilane (OTS). This technique will provide a useful basis for the implementation of nanostructure-based field emission transistor (FET) devices. This new process can be used to fabricate SWCNT channels of FET devices. English AMER INST PHYSICS Selectively Self-Assembled Single-Salled Carbon Nanotubes Using Only Photolithography Without Additional Chemical Process Conference 10.1063/1.3666631 1 30th International Conference on the Physics of Semiconductors (ICPS-30), v.1399 30th International Conference on the Physics of Semiconductors (ICPS-30) 1399 US Seoul, SOUTH KOREA 2010-07-25 PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS 000301053000392 2-s2.0-84862819233 Proceedings Paper