Lim, Keun Yong Kim, Hong Hee Noh, Ji Hyun Tak, So Hyun Yu, Jae-Woong Choi, Won Kook 2024-01-19T13:01:51Z 2024-01-19T13:01:51Z 2022-02-17 2022-01 2046-2069 https://pubs.kist.re.kr/handle/201004/115861 A facile thin film encapsulation (TFE) method having a triple-layered structure of a-SiNx:H/SiOxNy/hybrid SiOx (ASH) on QD-LEDs was performed utilizing both reproducible plasma-enhanced chemical vapor deposition (PECVD) and simple dip-coating processes without adopting atomic layer deposition (ALD). The ASH films fabricated on a polyethylene terephthalate (PET) substrate show a high average transmittance of 88.80% in the spectral range of 400-700 nm and a water vapor transmission rate (WVTR) value of 7.3 x 10(-4) g per m(2) per day. The measured time to reach 50% of the initial luminance (T-50) at initial luminance values of 500, 1000, and 2000 cd m(-2) was 711.6, 287.7, and 78.6 h, respectively, and the extrapolated T-50 at 100 cd m(-2) is estimated to be approximately 9804 h, which is comparable to that of the 12 112 h for glass lid-encapsulated QD-LEDs. This result demonstrates that TFE with the ASH films has the potential to overcome the conventional drawbacks of glass lid encapsulation. English ROYAL SOC CHEMISTRY Thin film encapsulation for quantum dot light-emitting diodes using a-SiNx:H/SiOxNy/hybrid SiOx barriers Article 10.1039/d1ra07712k 1 RSC ADVANCES, v.12, no.7, pp.4113 - 4119 RSC ADVANCES 12 7 4113 4119 N scie scopus 000750412200001 2-s2.0-85124389626 Chemistry, Multidisciplinary Chemistry Article ATOMIC LAYER DEPOSITION PERFORMANCE ALD QLED barrier film in-situ passivation lifetime