Woo, S. Ryu, G. Kim, T. Hong, N. Han, J.-H. Chu, R.J. Bae, J. Kim, J. Lee, I.-H. Jung, D. Choi, W.J. 2024-01-19T13:02:01Z 2024-01-19T13:02:01Z 2022-01-26 2022-01 https://pubs.kist.re.kr/handle/201004/115872 We demonstrate, for the first time, GaAs thin film solar cells epitaxially grown on a Si substrate using a metal wafer bonding and epitaxial lift-off process. A relatively thin 2.1 ？m GaAs buffer layer was first grown on Si as a virtual substrate, and a threading dislocation density of 1.8 × 107 cm？2 was achieved via two In0.1Ga0.9As strained insertion layers and 6× thermal cycle annealing. An inverted p-on-n GaAs solar cell structure grown on the GaAs/Si virtual substrate showed homogenous photoluminescence peak intensities throughout the 2” wafer. We show a 10.6% efficient GaAs thin film solar cell without anti-reflection coatings and compare it to nominally identical upright structure solar cells grown on GaAs and Si. This work paves the way for large-scale and low-cost wafer-bonded III-V multi-junction solar cells. ？ 2022 by the authors. Licensee MDPI, Basel, Switzerland. English MDPI Growth and Fabrication of GaAs Thin-Film Solar Cells on a Si Substrate via Hetero Epitaxial Lift-Off Article 10.3390/app12020820 1 Applied Sciences (Switzerland), v.12, no.2 Applied Sciences (Switzerland) 12 2 N scie scopus 000911280300001 2-s2.0-85122970674 Chemistry, Multidisciplinary Engineering, Multidisciplinary Materials Science, Multidisciplinary Physics, Applied Chemistry Engineering Materials Science Physics Article Epitaxial lift-off Flexible photovoltaics Heteroepitaxial growth Solar cell Wafer bonding