Bhardwaj, Richa Bharti, Amardeep Kaur, Baljeet Kumar, Manish Kandasami, Asokan Chae, Keun Hwa Goyal, Navdeep 2024-01-19T13:02:04Z 2024-01-19T13:02:04Z 2022-01-25 2022-01 0167-577X https://pubs.kist.re.kr/handle/201004/115875 ZnO films grown on Si(100) substrate through radio frequency (RF) sputtering are subjected to 100 keV Ni ion beam at different fluence (1 x 10(16), 2.5 x 10(16) and 5 x 10(16) ions/cm(2)). High resolution X-ray diffraction revealed the increase in crystallite size and development of stress gradient in the ZnO thin films with the increasing Ni ion fluence. Ni implanted ZnO/Si(100) films exhibits room temperature ferromagnetism (RTFM) which is discussed via defect induced bound magnetic polaron model. Near-edge X-ray absorption fine-structure (NEXAFS) measurements at Ni L-3,L-2-edge confirm the nature of implanted Ni ion inside the ZnO matrix. Further, NEXAFS at O K-edge revealed the onset of O(2p) with Ni(3d) orbital states, which is correlated with the observed RTFM. English Elsevier BV Origin of magnetism in low energy Ni ion implanted ZnO thin films Article 10.1016/j.matlet.2021.130983 1 Materials Letters, v.307 Materials Letters 307 N scie scopus 000711234300009 2-s2.0-85117168261 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article FERROMAGNETISM Ion implantation XAS RTFM BMP Spintronics