Chalapathi, U. Park, S.-H. Choi, W.J. 2024-01-19T13:04:37Z 2024-01-19T13:04:37Z 2021-10-21 2021-12 1369-8001 https://pubs.kist.re.kr/handle/201004/116024 A two-step chemical bath deposition (CBD) method that involves the deposition of films at two different bath temperatures is developed to enhance the grain growth and hole mobility of lead sulfide (PbS) thin films. The films deposited at three different conditions; first at 60 °C for 2 h, second at 30 °C for 1 h and at 60 °C for the subsequent 1 h, and finally at 60 °C for 1 h and at 30 °C for the subsequent hour. The deposition of PbS at only 60 °C for 2 h leads to the formation of cubic crystals with different sizes and hole mobility of 43.8 cm2V？1s？1. The deposition at a low temperature of 30 °C for the initial 1 h followed by the deposition at a high temperature of 60 °C for the subsequent hour increases the grain size and hole mobility to 62.2 cm2V？1s？1. However, the deposition of PbS at a high temperature of 60 °C for 1 h followed by the deposition at a low temperature of 30 °C for the subsequent hour decreases the grain size and hole mobility to 32.1 cm2V？1s？1. The PbS film deposited at low temperature in the first step acts as a seed layer for the growth of large-grained PbS in the second step. Thus, the two-step CBD method enhances the grain growth and hole mobility of PbS films. Hence, the two-step CBD method is very much useful for the growth of PbS for its applications in optoelectronic devices. ？ 2021 Elsevier Ltd English Elsevier Ltd Grain growth Grain size and shape IV-VI semiconductors Lead compounds Microstructure Optoelectronic devices Sulfur compounds Temperature Thin films Bath temperatures Chemical bath deposition methods Chemical-bath deposition Grainsize Highest temperature Lows-temperatures PbS thin film Property Thin-films Two-step chemical bath deposition Deposition Two-step chemical bath deposition enhanced mobility of PbS thin films Article 10.1016/j.mssp.2021.106147 1 Materials Science in Semiconductor Processing, v.136 Materials Science in Semiconductor Processing 136 scie scopus 000705523800004 2-s2.0-85114099122 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Engineering Materials Science Physics Article Grain growth Grain size and shape IV-VI semiconductors Lead compounds Microstructure Optoelectronic devices Sulfur compounds Temperature Thin films Bath temperatures Chemical bath deposition methods Chemical-bath deposition Grainsize Highest temperature Lows-temperatures PbS thin film Property Thin-films Two-step chemical bath deposition Deposition Bath temperature Electrical properties Microstructure PbS thin films Two-step CBD