Lee, Dong Uk Ha, Lim-Kyoung Kim, Jin Soak Kim, Eun Kyu Koh, Eui Kwan Han, Il Ki 2024-01-19T13:09:34Z 2024-01-19T13:09:34Z 2022-03-07 2008 1862-6351 https://pubs.kist.re.kr/handle/201004/116078 Undoped GaN layers with thickness of 278 mu m were grown by hydride vapor phase epitaxy method. The samples with different threading dislocation densities of 9.0x10(6) cm(-2) and 7.2x10(6) cm(-2) were irradiated by electron-beam with the energy of 1 MeV and dose of 1x10(15) cm(-2). The defect states of the samples after electron beam irradiation were characterized by deep level transient spectroscopy measurement. After the electron-beam irradiation, the the defects appeared to states with the activation energies of 0.61 eV, 0.30 eV, and 0.57 W. English WILEY-V C H VERLAG GMBH Dislocation related defect states in GaN irradiated with 1 MeV electron-beam Conference 10.1002/pssc.200778552 1 7th International Conference on Nitride Semiconductors (ICNS-7), v.5, no.6, pp.1630 - + 7th International Conference on Nitride Semiconductors (ICNS-7) 5 6 1630 + GE Las Vegas, NV 2007-09-16 PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 000256695700046 2-s2.0-77951243273 Proceedings Paper