Byun, Young Tae Kim, Suhyun Kim, Sun Ho Chung, Youngchul 2024-01-19T13:09:36Z 2024-01-19T13:09:36Z 2022-03-07 2008 1862-6351 https://pubs.kist.re.kr/handle/201004/116080 Laser diodes monolithically integrated with a passive wave-guide is fabricated by using a quantum-well intermixing. This technique first consists of using a photolithography and reactive ion etching process to create a Si3N4 implant mask region on the sample. This is followed by a 1-MeV phosphorous ion implantation at a dose of 5x10(14) p ions/cm(2) at 200 degrees C. A subsequent two-step RTA annealing QW intermixing through the diffusion of the point defects. For the integration of a laser diode and a passive waveguide, the mirror facet is formed by creating a deeply-etched trench between an active and passive region by RIE etching. The lasing operation and shifted lasing wavelengths are measured and compared experimentally.(C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. English WILEY-V C H VERLAG GMBH Fabrication of blue-shifted Fabry-Perot laser diodes for integration with optical passive waveguides Conference 10.1002/pssc.200779250 1 34th International Symposium on Compound Semiconductors, v.5, no.9, pp.2835 - + 34th International Symposium on Compound Semiconductors 5 9 2835 + GE Kyoto, JAPAN 2007-10-15 PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 000258710300040 2-s2.0-77951279343 Proceedings Paper