Lee, Jin Hee Jeon, Woong Bae Moon, Jong Sung Lee, Junghyun Han, Sang-Wook Bodrog, Zoltan Gali, Adam Lee, Sang-Yun Kim, Je-Hyung 2024-01-19T13:31:26Z 2024-01-19T13:31:26Z 2022-01-25 2021-11 1530-6984 https://pubs.kist.re.kr/handle/201004/116176 Crystallographic defects such as vacancies and stacking faults engineer electronic band structure at the atomic level and create zero- and two-dimensional quantum structures in crystals. The combination of these point and planar defects can generate a new type of defect complex system. Here, we investigate silicon carbide nanowires that host point defects near stacking faults. These point-planar defect complexes in the nanowire exhibit outstanding optical properties of high-brightness single photons (>360 kcounts/s), a fast recombination time (<1 ns), and a high Debye-Waller factor (>50%). These distinct optical properties of coupled point-planar defects lead to an unusually strong zero-phonon transition, essential for achieving highly efficient quantum interactions between multiple qubits. Our findings can be extended to other defects in various materials and therefore offer a new perspective for engineering defect qubits. English AMER CHEMICAL SOC Strong Zero-Phonon Transition from Point Defect-Stacking Fault Complexes in Silicon Carbide Nanowires Article 10.1021/acs.nanolett.1c03013 1 NANO LETTERS, v.21, no.21, pp.9187 - 9194 NANO LETTERS 21 21 9187 9194 N scie scopus 000718298700032 2-s2.0-85118799841 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article QUANTUM EMISSION COHERENT CONTROL COLOR-CENTERS SIC NANOWIRES AB-INITIO VACANCY ENTANGLEMENT WHISKERS QUBITS SPINS silicon carbide point defect stacking fault nanowire Debye-Waller factor