Jeon, Dae Young Yumin Koh Chu-Young Cho Kyung-Ho Park 2024-01-19T13:31:40Z 2024-01-19T13:31:40Z 2022-01-10 2021-11 2158-3226 https://pubs.kist.re.kr/handle/201004/116191 AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temperature variation in an effort to further advance development of high-speed, high-power devices and sensors for temperature applications. Our results revealed drain current degradation caused by temperature-dependent series resistance, as well as several scattering mechanisms. In addition, a negligible surface roughness scattering effect in AlGaN/GaN HEMTs was confirmed through mobility attenuation factors. ？ 2021 Author(s). English American Institute of Physics Inc. Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors Article 10.1063/5.0064823 1 AIP Advances, v.11, no.11 AIP Advances 11 11 N scie scopus 000755512800013 2-s2.0-85118878514 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article AlGaN/GaN HEMTs Temperature dependance Phonon scattering Series resistance Mobility degradation