Kim, Jae-Keun Cho, Kyungjune Jang, Juntae Baek, Kyeong-Yoon Kim, Jehyun Seo, Junseok Song, Minwoo Shin, Jiwon Kim, Jaeyoung Parkin, Stuart S. P. Lee, Jung-Hoon Kang, Keehoon Lee, Takhee 2024-01-19T13:32:22Z 2024-01-19T13:32:22Z 2021-10-21 2021-11 0935-9648 https://pubs.kist.re.kr/handle/201004/116236 The controllability of carrier density and major carrier type of transition metal dichalcogenides(TMDCs) is critical for electronic and optoelectronic device applications. To utilize doping in TMDC devices, it is important to understand the role of dopants in charge transport properties of TMDCs. Here, the effects of molecular doping on the charge transport properties of tungsten diselenide (WSe2) are investigated using three p-type molecular dopants, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F-4-TCNQ), tris(4-bromophenyl)ammoniumyl hexachloroantimonate (magic blue), and molybdenum tris(1,2-bis(trifluoromethyl)ethane-1,2-dithiolene) (Mo(tfd-COCF3)(3)). The temperature-dependent transport measurements show that the dopant counterions on WSe2 surface can induce Coulomb scattering in WSe2 channel and the degree of scattering is significantly dependent on the dopant. Furthermore, the quantitative analysis revealed that the amount of charge transfer between WSe2 and dopants is related to not only doping density, but also the contribution of each dopant ion toward Coulomb scattering. The first-principles density functional theory calculations show that the amount of charge transfer is mainly determined by intrinsic properties of the dopant molecules such as relative frontier orbital positions and their spin configurations. The authors' systematic investigation of the charge transport of doped TMDCs will be directly relevant for pursuing molecular routes for efficient and controllable doping in TMDC nanoelectronic devices. English WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Molecular Dopant-Dependent Charge Transport in Surface-Charge-Transfer-Doped Tungsten Diselenide Field Effect Transistors Article 10.1002/adma.202101598 1 Advanced Materials, v.33, no.44 Advanced Materials 33 44 N scie scopus 000696590200001 2-s2.0-85115247232 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article TRANSITION-METAL DICHALCOGENIDES DENSITY-FUNCTIONAL THEORY ELECTRON MOS2 F(4)TCNQ charged impurity scattering density functional theory field effect transistors surface charge transfer doping tungsten diselenide