Lee, Gun-Hee Cuong, Tran-Viet Yeo, Dong-Kyu Cho, Hyunjin Ryu, Beo-Deul Kim, Eun-Mi Nam, Tae-Sik Suh, Eun-Kyung Seo, Tae-Hoon Hong, Chang-Hee 2024-01-19T13:33:06Z 2024-01-19T13:33:06Z 2022-04-03 2021-10 2076-3417 https://pubs.kist.re.kr/handle/201004/116280 We introduce a low temperature process for coating InGaN/GaN light-emitting diodes (LEDs) with h-BN as a passivation layer. The effect of h-BN on device performance and reliability is investigated. At -5 V, the leakage current of the h-BN passivated LED was -1.15 x 10(-9) A, which was one order lower than the reference LED's leakage current of -1.09 x 10(-8) A. The h-BN layer minimizes the leakage current characteristics and operating temperature by acting as a passivation and heat dispersion layer. With a reduced working temperature of 33 from 45 & DEG;C, the LED lifetime was extended 2.5 times following h-BN passivation. According to our findings, h-BN passivation significantly improves LED reliability. English MDPI Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes Article 10.3390/app11199321 1 Applied Sciences-basel, v.11, no.19 Applied Sciences-basel 11 19 Y scie scopus 000726744300001 2-s2.0-85116767747 Chemistry, Multidisciplinary Engineering, Multidisciplinary Materials Science, Multidisciplinary Physics, Applied Chemistry Engineering Materials Science Physics Article GAN CRYSTALS light emitting diodes h-BN passivation operating temperature