Park, Jae-Wan Jung, Kyooho Yang, Min Kyu Park, Jong-Wan Lee, Jeon-Kook 2024-01-19T13:38:55Z 2024-01-19T13:38:55Z 2022-03-07 2007 1099-4734 https://pubs.kist.re.kr/handle/201004/116429 Pt/Cr-doped SrZrO3/SrRuO3 metal-oxide-metal (MOM) structures were fabricated by off-axis rf sputtering for nonvolatile memory applications. The MOM structures showed reproducible and bistable resistive switching behaviors. From the low-temperature IN measurements, it was found that the low-resistance state (LRS) was governed by ohmic conduction. In addition, the characteristics of LRS were influenced by switching parameters. With increasing set power and sweep delay time, the LRS current was decreased. These results suggested that the resistive switching mechanism is related to the formation of local conducting path in SrZrO3 matrix. English IEEE Set power dependency on the resistive switching in Cr-doped SrZrO3 thin films for nonvolatile memory devices Conference 10.1109/ISAF.2007.4393163 1 16th IEEE International Symposium on Applications of Ferroelectrics, pp.46 - + 16th IEEE International Symposium on Applications of Ferroelectrics 46 + US Nara, JAPAN 2007-05-27 2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 000253416100017 2-s2.0-51349130236 Proceedings Paper