Lee, Donghun Lee, Jea Jung Kim, Yoon Seok Kim, Yeon Ho Kim, Jong Chan Huh, Woong Lee, Jaeho Park, Sungmin Jeong, Hu Young Kim, Young Duck Lee, Chul-Ho 2024-01-19T14:00:40Z 2024-01-19T14:00:40Z 2022-04-05 2021-09 2520-1131 https://pubs.kist.re.kr/handle/201004/116482 Carriers in a molybdenum disulfide transistor can be modulated without decreasing mobility by remote doping and charge transfer through a van der Waals heterostructure, which avoids dopant-induced impurity scattering in the channel. Doping is required to modulate the electrical properties of semiconductors but introduces impurities that lead to Coulomb scattering, which hampers charge transport. Such scattering is a particular issue in two-dimensional semiconductors because charged impurities are in close proximity to the atomically thin channel. Here we report the remote modulation doping of a two-dimensional transistor that consists of a band-modulated tungsten diselenide/hexagonal boron nitride/molybdenum disulfide heterostructure. The underlying molybdenum disulfide channel is remotely doped via controlled charge transfer from dopants on the tungsten diselenide surface. The modulation-doped device exhibits two-dimensional-confined charge transport and the suppression of impurity scattering, shown by increasing mobility with decreasing temperature. Our molybdenum disulfide modulation-doped field-effect transistors exhibit a room-temperature mobility of 60 cm(2) V-1 s(-)(1); in comparison, transistors that have been directly doped exhibit a mobility of 35 cm(2) V-1 s(-)(1). English NATURE PUBLISHING GROUP Remote modulation doping in van der Waals heterostructure transistors Article 10.1038/s41928-021-00641-6 1 Nature Electronics, v.4, no.9, pp.664 - 670 Nature Electronics 4 9 664 670 N scie scopus 000695437800001 2-s2.0-85114871292 Engineering, Electrical & Electronic Engineering Article CARRIER TRANSPORT MONOLAYER MOS2 MOBILITY GRAPHENE HOLE POLARIZATION TRANSITION CONTACTS BARRIER SURFACE