Seo, Tae Hoon Lee, WonKi Lee, Kyu Seung Hwang, Jun Yeon Son, Dong Ick Ahn, Seokhoon Cho, Hyunjin Kim, Myung Jong 2024-01-19T14:01:06Z 2024-01-19T14:01:06Z 2022-01-10 2021-09 0008-6223 https://pubs.kist.re.kr/handle/201004/116509 Arranging carbon, boron, and nitrogen atoms in a sp(2) network can give rise to tunable electronic properties from insulators (h-BN) to metals (graphene). For semiconductor applications, the construction of a ternary structure (h-BxCyNz) is highly desirable, but its uniform and large-area synthesis has remained a great challenge. This challenge has been attempted by a facile chemical vapor deposition method with a single molecular precursor, N-tri-methyl borazine where boron, carbon, and nitrogen atoms are covalently bonded, onto Ni catalysts in conjunction with the quenching method after the synthesis. The atomic structure closely resembles h-BC2N as revealed by XPS (B:C:N similar to 1:1.8:1) and nanometer resolution EELS mapping, and the photoluminescence and electroluminescence observed from the h-BC2N film were in agreement, proving its well-established bandgap of 2.15 eV. As a practical application, the utilization of h-BC2N film for 2D light emitting diodes was demonstrated. Though films might have impurities such as small h-BN fragments and h-BxCyNz other than h-BC2N phase, we believe that this work provide a starting point of controlling the ternary BCN compounds that retain sp(2) hybridized chemical bonds. (C) 2021 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD Dominant formation of h-BC2N in h-BxCyNz films: CVD synthesis and characterization Article 10.1016/j.carbon.2021.06.080 1 CARBON, v.182, pp.791 - 798 CARBON 182 791 798 N scie scopus 000684563200012 2-s2.0-85109089138 Chemistry, Physical Materials Science, Multidisciplinary Chemistry Materials Science Article BORON-NITRIDE ELECTRONIC-STRUCTURE ATOMIC LAYERS GRAPHENE BANDGAP CARBON h-BC2N Bandgap Chemical vapor deposition Optoelectronic application