<?xml version="1.0" encoding="utf-8" standalone="no"?>
<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Baek,&#x20;In-Hwan</dcvalue>
<dcvalue element="contributor" qualifier="author">Cho,&#x20;Ah-Jin</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Ga&#x20;Yeon</dcvalue>
<dcvalue element="contributor" qualifier="author">Choi,&#x20;Heenang</dcvalue>
<dcvalue element="contributor" qualifier="author">Won,&#x20;Sung&#x20;Ok</dcvalue>
<dcvalue element="contributor" qualifier="author">Eom,&#x20;Taeyong</dcvalue>
<dcvalue element="contributor" qualifier="author">Chung,&#x20;Taek-Mo</dcvalue>
<dcvalue element="contributor" qualifier="author">Hwang,&#x20;Cheol&#x20;Seong</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Seong&#x20;Keun</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-19T14:01:44Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-19T14:01:44Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-10-21</dcvalue>
<dcvalue element="date" qualifier="issued">2021-09</dcvalue>
<dcvalue element="identifier" qualifier="issn">2050-7526</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;116551</dcvalue>
<dcvalue element="description" qualifier="abstract">Atomic&#x20;layer&#x20;deposition&#x20;(ALD)&#x20;is&#x20;a&#x20;technique&#x20;based&#x20;on&#x20;the&#x20;surface&#x20;reaction&#x20;of&#x20;precursors;&#x20;thus,&#x20;it&#x20;strongly&#x20;depends&#x20;on&#x20;the&#x20;surface&#x20;states&#x20;of&#x20;the&#x20;substrate.&#x20;We&#x20;demonstrate&#x20;significant&#x20;changes&#x20;in&#x20;the&#x20;structural&#x20;and&#x20;electrical&#x20;properties&#x20;of&#x20;SnO&#x20;thin&#x20;films&#x20;via&#x20;modification&#x20;of&#x20;substrate&#x20;surface&#x20;states.&#x20;The&#x20;surface&#x20;of&#x20;SiO2&#x20;exposed&#x20;to&#x20;the&#x20;atmosphere&#x20;is&#x20;usually&#x20;contaminated&#x20;by&#x20;organic&#x20;compounds&#x20;and&#x20;lacks&#x20;hydroxyl&#x20;groups.&#x20;The&#x20;plasma&#x20;treatment&#x20;effectively&#x20;formed&#x20;numerous&#x20;functional&#x20;groups&#x20;on&#x20;SiO2,&#x20;eventually&#x20;resulting&#x20;in&#x20;significant&#x20;differences&#x20;in&#x20;the&#x20;growth&#x20;characteristics&#x20;and&#x20;properties&#x20;of&#x20;ALD-grown&#x20;SnO&#x20;films.&#x20;In&#x20;the&#x20;case&#x20;of&#x20;a&#x20;plasma-treated&#x20;SiO2&#x20;substrate,&#x20;the&#x20;SnO&#x20;layer&#x20;was&#x20;fully&#x20;crystallized&#x20;at&#x20;the&#x20;SnO&#x2F;SiO2&#x20;interface,&#x20;and&#x20;the&#x20;(00l)&#x20;planes&#x20;of&#x20;SnO&#x20;were&#x20;aligned&#x20;parallel&#x20;to&#x20;the&#x20;substrate.&#x20;The&#x20;numerous&#x20;functional&#x20;groups&#x20;on&#x20;the&#x20;plasma-treated&#x20;SiO2&#x20;promoted&#x20;a&#x20;complete&#x20;reaction&#x20;on&#x20;the&#x20;surface,&#x20;which&#x20;resulted&#x20;in&#x20;the&#x20;formation&#x20;of&#x20;more&#x20;stoichiometric&#x20;SnO&#x20;containing&#x20;fewer&#x20;impurities&#x20;near&#x20;the&#x20;interface.&#x20;The&#x20;changes&#x20;in&#x20;the&#x20;interfacial&#x20;properties&#x20;by&#x20;the&#x20;plasma&#x20;treatment&#x20;of&#x20;SiO2&#x20;enhanced&#x20;the&#x20;field-effect&#x20;mobility&#x20;from&#x20;0.7&#x20;to&#x20;2.0&#x20;cm(2)&#x20;V-1&#x20;s(-1)&#x20;and&#x20;reduced&#x20;the&#x20;hysteresis&#x20;voltage.&#x20;The&#x20;findings&#x20;may&#x20;contribute&#x20;to&#x20;the&#x20;realization&#x20;of&#x20;complementary&#x20;oxide&#x20;thin&#x20;film&#x20;devices&#x20;in&#x20;future&#x20;electronics.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">ROYAL&#x20;SOC&#x20;CHEMISTRY</dcvalue>
<dcvalue element="subject" qualifier="none">THIN-FILMS</dcvalue>
<dcvalue element="subject" qualifier="none">GROWTH</dcvalue>
<dcvalue element="subject" qualifier="none">OXIDE</dcvalue>
<dcvalue element="subject" qualifier="none">MONOXIDE</dcvalue>
<dcvalue element="title" qualifier="none">Enhancement&#x20;of&#x20;electrical&#x20;performance&#x20;of&#x20;atomic&#x20;layer&#x20;deposited&#x20;SnO&#x20;films&#x20;via&#x20;substrate&#x20;surface&#x20;engineering</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1039&#x2F;d1tc02703d</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">JOURNAL&#x20;OF&#x20;MATERIALS&#x20;CHEMISTRY&#x20;C,&#x20;v.9,&#x20;no.36,&#x20;pp.12314&#x20;-&#x20;12321</dcvalue>
<dcvalue element="citation" qualifier="title">JOURNAL&#x20;OF&#x20;MATERIALS&#x20;CHEMISTRY&#x20;C</dcvalue>
<dcvalue element="citation" qualifier="volume">9</dcvalue>
<dcvalue element="citation" qualifier="number">36</dcvalue>
<dcvalue element="citation" qualifier="startPage">12314</dcvalue>
<dcvalue element="citation" qualifier="endPage">12321</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000686893800001</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-85115783623</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Materials&#x20;Science,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Materials&#x20;Science</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">THIN-FILMS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">GROWTH</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">OXIDE</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MONOXIDE</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">SnO</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">atomic&#x20;layer&#x20;deposition</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">p-type</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">surface&#x20;treatment</dcvalue>
</dublin_core>
