Joo, Ji-Eun Lee, Myung-Jae Park, Sung Min 2024-01-19T14:04:14Z 2024-01-19T14:04:14Z 2022-01-10 2021-07 1424-8220 https://pubs.kist.re.kr/handle/201004/116711 This paper presents an optoelectronic receiver (Rx) IC with an on-chip avalanche photodiode (APD) realized in a 0.18-mu m CMOS process for the applications of home-monitoring light detection and ranging (LiDAR) sensors, where the on-chip CMOS P+/N-well APD was implemented to avoid the unwanted signal distortion from bondwires and electro-static discharge (ESD) protection diodes. Various circuit techniques are exploited in this work, such as the feedforward transimpedance amplifier for high gain, and a limiting amplifier with negative impedance compensation for wide bandwidth. Measured results demonstrate 93.4-dB omega transimpedance gain, 790-MHz bandwidth, 12-pA/root Hz noise current spectral density, 6.74-mu A(pp) minimum detectable signal that corresponds to the maximum detection range of 10 m, and 56.5-mW power dissipation from a 1.8-V supply. This optoelectronic Rx IC provides a potential for a low-cost low-power solution in the applications of home-monitoring LiDAR sensors. English MDPI FRONT-END CIRCUIT PHOTODETECTORS PERFORMANCE A CMOS Optoelectronic Receiver IC with an On-Chip Avalanche Photodiode for Home-Monitoring LiDAR Sensors Article 10.3390/s21134364 1 SENSORS, v.21, no.13 SENSORS 21 13 scie scopus 000671097600001 2-s2.0-85108415526 Chemistry, Analytical Engineering, Electrical & Electronic Instruments & Instrumentation Chemistry Engineering Instruments & Instrumentation Article FRONT-END CIRCUIT PHOTODETECTORS PERFORMANCE avalanche photodiode CMOS feedforward limiting amplifier optoelectronic transimpedance amplifier