Roh, J.W. Yang, J.S. Ok, S.H. Woo, D.H. Lee, S. Jhon, Y.M. Mizumoto, T. Lee, W.Y. Byun, Y.T. 2024-01-19T14:07:03Z 2024-01-19T14:07:03Z 2022-03-01 2006-09 1012-0394 https://pubs.kist.re.kr/handle/201004/116721 A novel process of wafer bonding between InP and a garnet crystal (Gd 3Ga5O12, CeY2Fe5O 12) based on O2 plasma surface-activation and low temperature heat treatment is presented. The O2 plasma assisted wafer bonding process was found to be very effective in bonding of InP and Gd 3Ga5O12, providing good bonding strength and hydrophilicity as well as no voids in the interface, which is crucial for fabrication of an integrated optical waveguide isolator. The isolation ratio of an integrated optical waveguide isolator fabricated by the O2 plasma assisted wafer bonding process was obtained to be 2.9 dB. English Trans Tech Publications Ltd Low temperature O2 plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator Conference 10.4028/3-908451-31-0.475 1 IUMRS International Conference in Asia 2006, IUMRS-ICA 2006, pp.475 - 478 IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 475 478 SZ Jeju 2006-09-10 Solid State Phenomena 2-s2.0-38549152426