Seong, Han-Kyu Lee, Seung-Yong Choi, Heon-Jin Kim, Tae-Hong Cho, Nam-Kyu Nahm, Kee-Suk Lee, Sang-Kwon 2024-01-19T14:07:37Z 2024-01-19T14:07:37Z 2022-03-07 2006 0255-5476 https://pubs.kist.re.kr/handle/201004/116722 We demonstrate the fabrication and the electrical transport properties of single crystalline 3C silicon carbide nanowires (SiC NWs). The growth of SiC NWs was carried out in a chemical vapor deposition (CVD) furnace. Methyltrichlorosilane (MTS, CH3SiCl3) was chosen as a source precursor. SiC NWs had diameters of less than 100 nm and lengths of several mu m. For electrical transport measurements, as-gown SiC NWs were prepared on a highly doped silicon wafer, pre-patterned by a photo-lithography process, with a 400 nm thick SiO2 layer. Source and drain electrodes were defined by e-beam lithography (EBL). Prior to the metal deposition (Ti/Au : 40 nm/70 nm) by thermal evaporation, the native oxide on SiC NWs was removed by buffered HF. The estimated mobility of carriers is 15 cm(2)/(VS) for a source-drain voltage (V-SD) of 0.02 V. It is very low compared to that expected in bulk and/or thin film 3C-SiC. The electrical measurements from nanowire-based field effect transistor (FET) structures illustrate that SiC NWs are weak n-type semiconductor. We have also demonstrated a powerful technique, a standard UV photo-lithography process, for fabrication of SiC nanowires instead of using EBL process. English TRANS TECH PUBLICATIONS LTD Fabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor Conference 10.4028/www.scientific.net/MSF.527-529.771 1 International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), v.527-529, pp.771 - 774 International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) 527-529 771 774 SZ Pittsburgh, PA 2005-09-18 Silicon Carbide and Related Materials 2005, Pts 1 and 2 000244227200182 Proceedings Paper