Kim, YS Choi, HK Khim, ZG Woo, JC Park, YD Chun, SH 2024-01-19T14:07:39Z 2024-01-19T14:07:39Z 2022-03-07 2006 1862-6351 https://pubs.kist.re.kr/handle/201004/116723 We fabricated high quality (Ga,Mn)As epilayers by low-temperature molecular beam epitaxy and studied the magnetic and magneto-transport properties in detail. In particular, we investigated the relation between the longitudinal and the transverse Hall resistivity over a wide range of temperatures. It turned out that the anomalous Hall coefficient scaled linearly with the longitudinal resistivity, which seems to imply that the skew scattering is the primary source of the anomalous Hall effect in (Ga,Mn)As if we consider classical models only. However, we cannot rule out other mechanisms because of the narrow range of resistivity investigated. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. English WILEY-VCH, INC Temperature dependence of the anomalous hall effect in ferromagnetic (Ga,Mn)As epilayers Conference 10.1002/pssc.200564144 1 32nd International Symposium on Compound Semiconductors, v.3, no.3, pp.697 - + 32nd International Symposium on Compound Semiconductors 3 3 697 + US Rust, GERMANY 2005-09-18 PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 000236810000077 2-s2.0-33646181381 Proceedings Paper