Lee, Sang-Kwon Seong, Han-Kyu Choi, Ki-Chul Cho, Narn-Kyu Choi, Heon-Jin Suh, Eun-Kyung Nahm, Kee-Suk 2024-01-19T14:08:09Z 2024-01-19T14:08:09Z 2022-03-07 2006 0255-5476 https://pubs.kist.re.kr/handle/201004/116754 We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8 x 8 mm(2) silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 similar to 70 cm(2)/(VS)-S-.. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed. English TRANS TECH PUBLICATIONS LTD Direct electrical characteristics of GaN nanowire field effect transistor (FET) without assistance of E-beam lithography (EBL) Conference 10.4028/www.scientific.net/MSF.527-529.1549 1 International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), v.527-529, pp.1549 - 1552 International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) 527-529 1549 1552 SZ Pittsburgh, PA 2005-09-18 SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2 000244227200367 Proceedings Paper