Park, Jae Young Yoo, SangHyuk Park, Byeongho Kim, Taekyeong Chun, Young Tea Kim, Jong Min Kang, Keonwook Lee, Soo Hyun Jun, Seong Chan 2024-01-19T14:30:48Z 2024-01-19T14:30:48Z 2021-10-21 2021-07 1998-0124 https://pubs.kist.re.kr/handle/201004/116813 We demonstrate the dipole-assisted carrier transport properties of bis(trifluoromethane)sulfonamide (TFSI)-treated O-ReS2 field-effect transistors. Pristine ReS2 was compared with defect-mediated ReS2 to confirm whether the presence of defects on the interface enhances the interaction between O-ReS2 and TFSI molecules. Prior to the experiment, density functional theory (DFT) calculation was performed, and the result indicated that the charge transfer between TFSI and O-ReS2 is more sensitive to external electric fields than that between TFSI and pristine ReS2. After TFSI treatment, the drain current of O-ReS2 FET was significantly increased up to 1,113.4 times except in the range of -0.32-0.76 V owing to Schottky barrier modulation from dipole polarization of TFSI molecules, contrary to a significant degradation in device performance in pristine ReS2 FET. Moreover, in the treated O-ReS2 device, the dipole direction was highly influenced by the voltage sweep direction, generating a significant area of hysteresis in I-V and transfer characteristics, which was further verified by the surface potential result. Furthermore, the dipole state was enhanced according to the wavelength of the light source and photocurrent. These results indicate that TFSI-treated ReS2 FET has large potential for use as next-generation memristor, memory, and photodetector. English TSINGHUA UNIV PRESS Dipole-assisted carrier transport in bis(trifluoromethane) sulfonamide-treated O-ReS2 field-effect transistor Article 10.1007/s12274-020-3185-y 1 NANO RESEARCH, v.14, no.7, pp.2207 - 2214 NANO RESEARCH 14 7 2207 2214 scie scopus 000625716800001 2-s2.0-85102314747 Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics Article Two-dimensional material ReS2 field-effect transistor TFSI superacid dipole