Son, Myungwoo Jang, Jaewon Kim, Gi-Hwan Lee, Ji-Hwan Chun, Dong Won Bae, Jee Hwan Kim, In S. Ham, Moon-Ho Chee, Sang-Soo 2024-01-19T14:31:18Z 2024-01-19T14:31:18Z 2021-10-21 2021-06 2637-6113 https://pubs.kist.re.kr/handle/201004/116846 Herein, we introduced surface modification of a Cu catalyst by employing CH4 pre-annealing, which changed the uniformly rough Cu surface; this resulted in formation of high-quality and uniform Bernal-stacked bilayer graphene as well as monolayer graphene due to controlled synthesis time. A well-designed Cu surface was developed for synthesis of bilayer graphene with high coverage (>95%) and a high Bernal-stacking ratio (similar to 99%). Dual-gated transistors of Bernal-stacked bilayer graphene showed typical tunable transfer characteristics under varying gate voltages with carrier mobilities of 1000-2000 cm(2) V-1 s(-1). Through density functional theory calculations, we demonstrated that a uniformly rough Cu surface is favorable for synthesis of Bernal-stacked bilayer graphene. Finally, we employed bilayer graphene as a perfect diffusion barrier facilitated by complementing the diffusion pathway of numerous grain boundaries in graphene. English AMER CHEMICAL SOC Large-Area Bernal-Stacked Bilayer Graphene Film on a Uniformly Rough Cu Surface via Chemical Vapor Deposition Article 10.1021/acsaelm.0c00905 1 ACS APPLIED ELECTRONIC MATERIALS, v.3, no.6, pp.2497 - 2503 ACS APPLIED ELECTRONIC MATERIALS 3 6 2497 2503 N scie scopus 000665655800007 2-s2.0-85106663759 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Engineering Materials Science Article TOTAL-ENERGY CALCULATIONS HIGH-QUALITY NI ALLOY GROWTH EQUILIBRIUM PENETRATION DIFFUSION BANDGAP OXYGEN bilayer graphene Bernal-stacking bandgap CH4 pre-annealing uniformly rough Cu surface diffusion barrier