Kang, Minsoo Chai, Hyun-Jun Jeong, Han Beom Park, Cheolmin Jung, In-Young Park, Eunpyo Cicek, Mert Mirac Lee, Injun Bae, Byeong-Soo Durgun, Engin Kwak, Joon Young Song, Seungwoo Choi, Sung-Yool Jeong, Hu Young Kang, Kibum 2024-01-19T14:33:28Z 2024-01-19T14:33:28Z 2021-09-05 2021-05-25 1936-0851 https://pubs.kist.re.kr/handle/201004/116976 Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (i.e., MoS2). Among ternary metal-oxy-chalcogenides, especially Bi2O2Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for Bi2O2Se that has been reported so far is a powder sublimation based chemical vapor deposition. The first step for pursuing the practical application of Bi2O2Se as a semiconductor material is developing a gas-phase growth process. Here, we report a cracking metal-organic chemical vapor deposition (c-MOCVD) for the gas-phase growth of Bi2O2Se. The resulting Bi2O2Se films at very low growth temperature (similar to 300 degrees C) show single-crystalline quality. By taking advantage of the gas-phase growth, the precise phase control was demonstrated by modulating the partial pressure of each precursor. In addition, c-MOCVD-grown Bi2O2Se exhibits outstanding electrical and optoelectronic performance at room temperature without passivation, including maximum electron mobility of 127 cm(2)/(V.s) and photoresponsivity of 45134 A/W. English AMER CHEMICAL SOC MOBILITY EPITAXY FILMS WSE2 Low-Temperature and High-Quality Growth of Bi2O2 Se Layered Semiconductors via Cracking Metal-Organic Chemical Vapor Deposition Article 10.1021/acsnano.1c00811 1 ACS NANO, v.15, no.5, pp.8715 - 8723 ACS NANO 15 5 8715 8723 scie scopus 000656994100069 2-s2.0-85106383338 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article MOBILITY EPITAXY FILMS WSE2 cracking metal-organic chemical vapor deposition bismuth-oxy-selenide low-growth temperature epitaxial growth field-effect transistor photodetector