So, B. Lee, J. Cheon, C. Lee, J. Choi, U. Kim, M. Song, J. Chang, J. Nam, O. 2024-01-19T15:01:58Z 2024-01-19T15:01:58Z 2021-10-21 2021-04-01 2158-3226 https://pubs.kist.re.kr/handle/201004/117152 Creating voids between thin films is a very effective method to improve thin film crystal quality. However, for AlN material systems, the AlN layer growth, including voids, is challenging because of the very high Al atom sticking coefficient. In this study, we demonstrated an AlN template with many voids grown on AlN nanorods made by polarity selective epitaxy and etching methods. We introduced a low V/III ratio and NH3 pulsed growth method to demonstrate high-quality coalesced AlN templates grown on AlN nanorods in a metal organic chemical vapor deposition reactor. The crystal quality and residual strain of AlN were enhanced by the void formations. It is expected that this growth method can contribute to the demonstration of high-performance deep UV LEDs and transistors. ？ 2021 Author(s). English American Institute of Physics Inc. Ammonia Crystals Etching III-V semiconductors Metallorganic chemical vapor deposition Nanorods Organic chemicals Organometallics Superconducting films Thin films AlN-layer grown Crystal qualities Etching method Material systems Residual strains Selective epitaxy Sticking coefficients Void formation Aluminum nitride Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method Article 10.1063/5.0042631 1 AIP Advances, v.11, no.4 AIP Advances 11 4 scie scopus 000715297000002 2-s2.0-85105707725 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article Ammonia Crystals Etching III-V semiconductors Metallorganic chemical vapor deposition Nanorods Organic chemicals Organometallics Superconducting films Thin films AlN-layer grown Crystal qualities Etching method Material systems Residual strains Selective epitaxy Sticking coefficients Void formation Aluminum nitride void AlN nanorod polarity selective epitaxy