Kim, Younghak Jeong, Wonmin Yun, Deokhyun Ahn, Gwang-Eun Lee, OukJae 2024-01-19T15:02:00Z 2024-01-19T15:02:00Z 2021-09-05 2021-04-01 0169-4332 https://pubs.kist.re.kr/handle/201004/117154 Computer engineers have been attempting to incorporate spin-based devices in future computer architectures, such as processing-in-memory (PIM) in artificial intelligence systems. A successful PIM requires ongoing efforts for developing fast and low-power spintronic material devices. The spin-orbit torque (SOT) device, which is associated with perpendicular magnetic anisotropy (PMA) materials, is a promising candidate. Herein, macroscopic and nanoscopic studies on the spin-orbit interaction of two distinct SOT-PMA systems are conducted to enhance our understanding of the interfacial PMA and pave the way of material design for reliable and high-performance spin memory and logic devices. The experimental results indicate that further theoretical studies are needed to establish a sophisticated explanation instead of the conventional hybridization for the interfacial PMA. In addition, an interesting phenomenon, which can be a useful ingredient while applying thermal energy barrier, concerning the integration of reliable spin devices in future commercial computer systems is reported. English ELSEVIER Spin and orbital properties of perpendicular magnetic anisotropy for spin-orbit torque material devices Article 10.1016/j.apsusc.2021.148959 1 APPLIED SURFACE SCIENCE, v.544 APPLIED SURFACE SCIENCE 544 scie scopus 000618296600003 2-s2.0-85099615489 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article Heavy metal/ferromagnet/oxide heterostructures Spin-orbit coupling Perpendicular magnetic anisotropy Interfacial phenomena Material design Spintronics