Lee, Jae Kap Kim, Jin Gyu Hembram, K. P. S. S. Yu, Seunggun Lee, Sang Gil 2024-01-19T15:02:51Z 2024-01-19T15:02:51Z 2021-09-05 2021-04 2052-5206 https://pubs.kist.re.kr/handle/201004/117195 Hexagonal boron nitride (h-BN) has been generally interpreted as having an AA stacking sequence. Evidence is presented in this article indicating that typical commercial h-BN platelets (similar to 10-500 nm in thickness) exhibit stacks of parallel nanosheets (similar to 10 nm in thickness) predominantly in the AB sequence. The AB-stacked nanosheet occurs as a metastable phase of h-BN resulting from the preferred texture and lateral growth of armchair (110) planes. It appears as an independent nanosheet or unit for h-BN platelets. The analysis is supported by simulation of thin AB films (2-20 layers), which explains the unique X-ray diffraction pattern of h-BN. With this analysis and the role of pressure in commercial high-pressure high-temperature sintering (driving nucleation and parallelizing the in-plane crystalline growth of the nuclei), a growth mechanism is proposed for 2D h-BN (on a substrate) as 'substrate-induced 2D growth', where the substrate plays the role of pressure. English INT UNION CRYSTALLOGRAPHY HETEROSTRUCTURES GRAPHENE AB-stacked nanosheet-based hexagonal boron nitride Article 10.1107/S2052520621000317 1 ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE CRYSTAL ENGINEERING AND MATERIALS, v.77, pp.260 - 265 ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE CRYSTAL ENGINEERING AND MATERIALS 77 260 265 scie scopus 000640218900008 2-s2.0-85104091318 Chemistry, Multidisciplinary Crystallography Chemistry Crystallography Article HETEROSTRUCTURES GRAPHENE hexagonal boron nitride AB stacking high-resolution transmission electron microscopy simulation