Park, Tae-Eon Min, Byoung-Chul Lee, Jaejun Jeon, Jeehoon Lee, Ki-Young Choi, Heon-Jin Chang, Joonyeon 2024-01-19T15:04:01Z 2024-01-19T15:04:01Z 2021-09-05 2021-03-19 0957-4484 https://pubs.kist.re.kr/handle/201004/117253 Gallium nitride nanowires (GaN NWs) with triangular cross-section exhibit universal conductance fluctuations (UCF) originating from the quantum interference of electron wave functions in the NWs. The amplitude of UCF is inversely proportional to the applied bias current. The bias dependence of UCF, combined with temperature dependence of the resistance suggests that phase coherent transport dominates over normal transport in GaN NWs. A unique temperature dependence of phase-coherent length and fluctuation amplitude is associated with inelastic electron-electron scattering in NWs. The phase-coherence length extracted from the UCF is as large as 400 nm at 1.8 K, and gradually decreases as temperature increases up to 60 K. English IOP PUBLISHING LTD UNIVERSAL CONDUCTANCE FLUCTUATIONS SEMICONDUCTOR NANOWIRES QUANTIZATION Phase-coherent transport in trigonal gallium nitride nanowires Article 10.1088/1361-6528/abcfeb 1 NANOTECHNOLOGY, v.32, no.12 NANOTECHNOLOGY 32 12 scie scopus 000603952900001 2-s2.0-85099199534 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article UNIVERSAL CONDUCTANCE FLUCTUATIONS SEMICONDUCTOR NANOWIRES QUANTIZATION gallium nitride nanowires magneto-transport universal conductance fluctuations phase coherence