Lee, Gyo Sub Jeong, Jae-Seung Yang, Min Kyu Song, Jin Dong Lee, Young Tack Ju, Hyunsu 2024-01-19T15:04:31Z 2024-01-19T15:04:31Z 2021-09-02 2021-03-01 0169-4332 https://pubs.kist.re.kr/handle/201004/117280 Nano-wire (NW) field-effect transistor (FET) is expected to be a promising device in the semiconductor industry owing to its scalability and enhanced gate-controllability. Particularly, III-V compound semiconductor-based NW FETs enable low power consumption because of their high mobility. In this study, a novel charge injection memory (CIM) device is presented using intrinsic InAs NW with high electron mobility. A simple combination of InAs native oxide and SiO2 stack accommodates charge trapping sites to store a bit information, resulting in a memory window of over 5 V. This charge-trapping behavior of the InAs NW FET is confirmed for more than 1000 s at room temperature. The disclosure of the charge-trapping effect in the InAs CIM provides a glimpse of the simplified non-volatile memory devices based on III-V NWs. Additionally, the synaptic behavior of InAs CIM is investigated for neuromorphic application. Utilizing the synaptic characteristics of the InAs CIM, an artificial neural network is implemented for simple handwritten digit recognition. This indicates that the InAs NW FETs can be used as the hardware for neuromorphic computational architectures. English ELSEVIER FLASH MEMORY OXIDE SYNAPSES DEVICE Non-volatile memory behavior of interfacial InOx layer in InAs nano-wire field-effect transistor for neuromorphic application Article 10.1016/j.apsusc.2020.148483 1 APPLIED SURFACE SCIENCE, v.541 APPLIED SURFACE SCIENCE 541 scie scopus 000608507600003 2-s2.0-85097142314 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article FLASH MEMORY OXIDE SYNAPSES DEVICE Neuromorphic device Artificial Neural Network Nano-wire Nonvolatile memory