Jang, YT Choi, CH Ju, BK Ahn, JH Lee, YH 2024-01-19T15:10:05Z 2024-01-19T15:10:05Z 2022-03-07 2003 1084-6999 https://pubs.kist.re.kr/handle/201004/117360 We have fabricated the gated field emitter using directly. grown carbon nanotubes (CNTs) as an electron emission source. Vertically aligned CNTs were grown at the center of the gate hole using thermal chemical vapor deposition. In order to reduce the leakage current due to flowing current along CNTs grown on the sidewalls of the gate hole, we adopted new process scheme such as sidewall protector. The leakage current of gated CNTs emitter with sidewall protector shows a decrease of 85.8% compared to that of conventional structure. English IEEE Gated field emitter using carbon nanotubes for vacuum microelectronic devices Conference 1 16th IEEE Annual International Conference on Micro Electro Mechanical Systems, pp.37 - 40 16th IEEE Annual International Conference on Micro Electro Mechanical Systems 37 40 US KYOTO, JAPAN 2003-01-19 MEMS-03: IEEE THE SIXTEENTH ANNUAL INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS 000182405500010 2-s2.0-0037818346 Proceedings Paper