Kim, Tae Wook Ra, Hyun Soo Ahn, Jongtae Jang, Jisu Taniguchi, Takashi Watanabe, Kenji Shim, Jae Won Lee, Young Tack Hwang, Do Kyung 2024-01-19T15:30:51Z 2024-01-19T15:30:51Z 2022-01-10 2021-02 1944-8244 https://pubs.kist.re.kr/handle/201004/117391 Two-dimensional transition metal dichalcogenide semiconductors are very promising candidates for future electronic applications with low power consumption due to a low leakage current and high on–off current ratio. In this study, we suggest a complementary circuit consisting of ambipolar WSe2 and n-MoS2 field-effect transistors (FETs), which demonstrate dual functions of a frequency doubler and single inversion AND (SAND) logic gate. In order to reduce the power consumption, a high-quality thin h-BN single crystal is used as a gate dielectric that leads to a low operating voltage of less than 5 V. By combining the low operating voltage with a low operating current in the complementary circuit, a low power consumption of 300 nW (a minimum of 10 pW) has been achieved, which is a significant improvement compared to the tens of μW consumed by a graphene channel. The complementary circuit shows the effective frequency doubling of the input with a dynamic range from 20 to 100 Hz. Furthermore, this circuit satisfies all the truth tables of a SAND logic gate that can be used as a universal logic gate like NAND. Considering that the NAND logic gate generally consists of four transistors, it is significantly advantageous to implement the equivalent circuit SAND logic gate with only two FETs. Our results open up possibilities for analog- and logic-circuit applications based on low-dimensional semiconductors. English American Chemical Society Frequency Doubler and Universal Logic Gate Based on Two-Dimensional Transition Metal Dichalcogenide Transistors with Low Power Consumption Article 10.1021/acsami.0c21222 1 ACS Applied Materials & Interfaces, v.13, no.6, pp.7470 - 7475 ACS Applied Materials & Interfaces 13 6 7470 7475 N scie scopus 000621051200048 2-s2.0-85100609840 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article 2D semiconductor complementary circuit frequency doubler single inversion AND logic gate low power consumption