Choi, Han-Hyeon Paik, Sung Hoon Kim, Youngjin Kim, Minsung Kang, Yong Soo Lee, Sang-Soo Jho, Jae Young Park, Jong Hyuk 2024-01-19T15:32:27Z 2024-01-19T15:32:27Z 2021-09-02 2021-02 1226-086X https://pubs.kist.re.kr/handle/201004/117485 Transition metal oxides have attracted considerable attention as a switching material for resistive random access memory (RRAM) based on the thermochemical mechanism (TCM). However, the heat energy required for resistance switching is applied to the entire area of the RRAM without position selectivity, causing random growth of conductive filaments (CFs) and degrading device performance. This study showed that structured electrodes can promote the TCM in nickel oxide (NiO)-based RRAM by enhancing the electric field within the switching material and controlling Joule heat generation locally. Pyramid-structured electrodes with an extremely sharp tip prepared by the template-stripping method achieve an electric field in the tip region that is similar to 5 times larger than that of conventional planar electrodes. The tip-enhanced electric field can induce a local temperature rise, which facilitates the TCM for nucleation and CF growth. The resulting RRAMs exhibit low and reliable forming, SET and RESET voltages (1.96 +/- 0.14 V, 1.44 +/- 0.12 V, and 0.64 +/- 0.05 V, respectively). Moreover, their retention time and resistance ratio (R-HRS/R-LRS) are greatly improved, by 10 and 10(2) times, respectively, compared to planar devices. This approach can achieve position selectivity in TCM-based resistance switching, and could lead to the development of high-performance RRAM. (c) 2020 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved. English 한국공업화학회 Facilitation of the thermochemical mechanism in NiO-based resistive switching memories via tip-enhanced electric fields Article 10.1016/j.jiec.2020.10.041 1 Journal of Industrial and Engineering Chemistry, v.94, pp.233 - 239 Journal of Industrial and Engineering Chemistry 94 233 239 N scie scopus kci ART002686575 000609409400015 2-s2.0-85096521146 Chemistry, Multidisciplinary Engineering, Chemical Chemistry Engineering Article NANOFILAMENTS FILAMENT ARRAYS METALS OXIDES Resistive memory Thermochemical mechanism Joule heating Position selectivity Tip-enhanced electric field Pyramid-structured electrode