Das, Tanmoy Yang, Eunyeong Seo, Jae Eun Kim, Jeong Hyeon Park, Eunpyo Kim, Minkyung Seo, Dongwook Kwak, Joon Young Chang, Jiwon 2024-01-19T15:33:14Z 2024-01-19T15:33:14Z 2021-09-02 2021-01-13 1944-8244 https://pubs.kist.re.kr/handle/201004/117534 Achieving a high-quality metal contact on two-dimensional (2D) semiconductors still remains a major challenge due to the strong Fermi level pinning and the absence of an effective doping method. Here, we demonstrate high performance "all-PtSe2" field-effect transistors (FETs) completely free from those issues, enabled by the vertical integration of a metallic thick PtSe2 source/drain onto the semiconducting ultrathin PtSe2 channel. Owing to its inherent thickness-dependent semiconductor-to-metal phase transition, the transferred metallic PtSe2 transforms the underlying semiconducting PtSe2 into metal at the junction. Therefore, a fully metallized source/drain and semiconducting channel could be realized within the same PtSe2 platform. The ultrathin PtSe2 FETs with PtSe2 vdW contact exhibits excellent gate tunability, superior mobility, and high ON current accompanied by one order lower contact resistance compared to conventional Ti/Au contact FETs. Our work provides a new device paradigm with a low resistance PtSe2 vdW contact which can overcome a fundamental bottleneck in 2D nanoelectronics. English American Chemical Society FIELD-EFFECT TRANSISTORS MOS2 PERFORMANCE CONTACTS NANOSHEETS GRAPHENE Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition Article 10.1021/acsami.0c17810 1 ACS Applied Materials & Interfaces, v.13, no.1, pp.1861 - 1871 ACS Applied Materials & Interfaces 13 1 1861 1871 scie scopus 000611066000181 2-s2.0-85099659892 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article FIELD-EFFECT TRANSISTORS MOS2 PERFORMANCE CONTACTS NANOSHEETS GRAPHENE platinum diselenide semiconductor-to-metal phase transition van der Waals contact contact resistance Schottky barrier height