Lim, Weon Cheol Singh, Jitendra Pal Kim, Younghak Song, Jonghan Chae, Keun Hwa Seong, Tae-Yeon 2024-01-19T15:34:21Z 2024-01-19T15:34:21Z 2021-09-02 2021-01 0042-207X https://pubs.kist.re.kr/handle/201004/117600 This work reports the effect of thermal annealing ranging from 0 to 800 degrees C on the various properties of zinc oxide thin film grown using radio-frequency sputtering. X-ray diffraction studies reveal the relaxation of stress up to thermal annealing of 400 degrees C and induction of residual stress thereafter. Zn K-edge X-ray absorption spectroscopic measurements reveal the variation of Zn-O and Zn-Zn bond distances with annealing temperature. Variation of coordination number with annealing temperature shows onset of oxygen vacancies at lower annealing temperatures. These vacancies and defects are also supported by the photoluminescence measurements. The optical band-gap of these films exhibit a significant variation with annealing temperature, which is in-line with the variation of crystallite size. Further, the magnetic behavior of these films is observed to follow the behavior of O 2p states along with defects as investigated from the X-ray magnetic circular dichroism. English PERGAMON-ELSEVIER SCIENCE LTD MAGNETIC-PROPERTIES TEMPERATURE DEPENDENCE PHOTOLUMINESCENCE DEPOSITION SIZE Effect of thermal annealing on the properties of ZnO thin films Article 10.1016/j.vacuum.2020.109776 1 VACUUM, v.183 VACUUM 183 scie scopus 000600895700006 2-s2.0-85091491948 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article MAGNETIC-PROPERTIES TEMPERATURE DEPENDENCE PHOTOLUMINESCENCE DEPOSITION SIZE ZnO Annealing temperature X-ray absorption spectroscopy X-ray magnetic circular dichroism