Kim, Youngjin Kim, Minsung Park, Jong Hyuk Shin, Keun-Young Lee, Sang-Soo Jeon, Woojin 2024-01-19T15:34:39Z 2024-01-19T15:34:39Z 2021-09-02 2021-01 1566-1199 https://pubs.kist.re.kr/handle/201004/117619 Composite-based resistance switching random access memory (ReRAM) has great potential for application in flexible and wearable electronics. However, its large operating parameters and low reliability still have some limitations in realizing practical applications, which is derived from its high dependence on the orientation and dispersion of the filler in the composite layer. Here, we proposed a novel composite system that does not depend heavily on the orientation or dispersion of the fillers within the composite film of the ReRAM device. The AgNW/TiO2 core-shell nanowires inducing superb resistance switching behavior were fabricated. The composite resistance switching (RS) film was prepared by mixing the one-dimensional core-shell particles and poly (vinyl alcohol) (PVA) dielectric matrix. The composite RS film exhibited remarkable resistance switching behavior with extremely low/uniform operating voltage (V-set similar to 0.13 +/- 0.013 V, and V-reset similar to -0.10 +/- 0.012 V), and the reliable switching behavior was maintained for up to similar to 200,000 mechanical deformation cycles under 3 mm of bending radius. To evaluate the resistance switching mechanism of the composite-type ReRAM, the structural analysis and device modeling were performed. English ELSEVIER FILAMENT FORMATION MEMORY TRANSITION Highly sustainable mechanical/electrical resistance switching behaviors via one-dimensional Ag/TiO2 core-shell resistive switchable materials in flexible composite Article 10.1016/j.orgel.2020.105968 1 ORGANIC ELECTRONICS, v.88 ORGANIC ELECTRONICS 88 scie scopus 000602301500002 2-s2.0-85092618751 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article FILAMENT FORMATION MEMORY TRANSITION Resistance switching random access memory Resistance switching filler Flexible Nano-composite ReRAM Uniformity Reliability