Kim, HJ Kim, DM Han, IK Choi, WJ Zimmermann, J Lee, J 2024-01-19T15:38:40Z 2024-01-19T15:38:40Z 2022-03-07 2002 0277-786X https://pubs.kist.re.kr/handle/201004/117635 Optical response of both the gate current and the drain current in p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic MODFET is reported and analytic models are presented. Based on quantum nature of the two-dimensional carrier statistics in the channel and a new model for the gate current, the overall current variation under optical illumination is explained. The results show power law relation between the current variation and the optical intensity. Near-threshold region in saturation region is found to. be most sensitive to the optical intensity variation. English SPIE-INT SOC OPTICAL ENGINEERING P-channel MODFET as an optoelectronic detector Conference 10.1117/12.481019 1 Conference on Asia-Pacific Optical and Wireless Communication (APOC 2002), v.4905, pp.326 - 334 Conference on Asia-Pacific Optical and Wireless Communication (APOC 2002) 4905 326 334 US SHANGHAI, PEOPLES R CHINA 2002-10-15 APOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS 000179013500041 2-s2.0-18744410641 Proceedings Paper