Park, Eunpyo Kim, Minkyung Kim, Tae Soo Kim, In Soo Park, Jongkil Kim, Jaewook Jeong, YeonJoo Lee, Suyoun Kim, Inho Park, Jong-Keuk Kim, Gyu Tae Chang, Jiwon Kang, Kibum Kwak, Joon Young 2024-01-19T16:00:40Z 2024-01-19T16:00:40Z 2021-09-02 2020-12-28 2040-3364 https://pubs.kist.re.kr/handle/201004/117664 Neuromorphic computing is of great interest among researchers interested in overcoming the von Neumann computing bottleneck. A synaptic device, one of the key components to realize a neuromorphic system, has a weight that indicates the strength of the connection between two neurons, and updating this weight must have linear and symmetric characteristics. Especially, a transistor-type device has a gate terminal, separating the processes of reading and updating the conductivity, used as a synaptic weight to prevent sneak path current issues during synaptic operations. In this study, we fabricate a top-gated flash memory device based on two-dimensional (2D) materials, MoS2 and graphene, as a channel and a floating gate, respectively, and Al2O3 and HfO2 to increase the tunneling efficiency. We demonstrate the linear weight updates and repeatable characteristics of applying negative/positive pulses, and also emulate spike timing-dependent plasticity (STDP), one of the learning rules in a spiking neural network (SNN). English ROYAL SOC CHEMISTRY MONOLAYER MOS2 MEMORY GRAPHENE ARRAY A 2D material-based floating gate device with linear synaptic weight update Article 10.1039/d0nr07403a 1 NANOSCALE, v.12, no.48, pp.24503 - 24509 NANOSCALE 12 48 24503 24509 scie scopus 000603084000022 2-s2.0-85098916755 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics Article MONOLAYER MOS2 MEMORY GRAPHENE ARRAY Synaptic weight Linear update Flash memory Floating Gate 2D material