Kim, Keonhee Park, Soojin Hu, Su Man Song, Jonghan Lim, Weoncheol Jeong, Yeonjoo Kim, Jaewook Lee, Suyoun Kwak, Joon Young Park, Jongkil Park, Jong Keuk Ju, Byeong-Kwon Jeong, Doo Seok Kim, Inho 2024-01-19T16:01:05Z 2024-01-19T16:01:05Z 2021-09-02 2020-12-11 1884-4049 https://pubs.kist.re.kr/handle/201004/117688 Conductive bridging random access memory (CBRAM) has been considered to be a promising emerging device for artificial synapses in neuromorphic computing systems. Good analog synaptic behaviors, such as linear and symmetric synapse updates, are desirable to provide high learning accuracy. Although numerous efforts have been made to develop analog CBRAM for years, the stochastic and abrupt formation of conductive filaments hinders its adoption. In this study, we propose a novel approach to enhance the synaptic behavior of a SiNx/a-Si bilayer memristor through Ge implantation. The SiNx and a-Si layers serve as switching and internal current limiting layers, respectively. Ge implantation induces structural defects in the bulk and surface regions of the a-Si layer, enabling spatially uniform Ag migration and nanocluster formation in the upper SiNx layer and increasing the conductance of the a-Si layer. As a result, the analog synaptic behavior of the SiNx/a-Si bilayer memristor, such as the nonlinearity, on/off ratio, and retention time, is remarkably improved. An artificial neural network simulation shows that the neuromorphic system with the implanted SiNx/a-Si memristor provides a 91.3% learning accuracy mainly due to the improved linearity. English NATURE RESEARCH ION MEMORY Enhanced analog synaptic behavior of SiNx/a-Si bilayer memristors through Ge implantation Article 10.1038/s41427-020-00261-0 1 NPG ASIA MATERIALS, v.12, no.1 NPG ASIA MATERIALS 12 1 scie scopus 000600197900002 2-s2.0-85097374523 Materials Science, Multidisciplinary Materials Science Article ION MEMORY Artificial synapse Memristor Neuromorphic computing Analog memristor Ion implantation Artificial Neural Network Conductive Bridge RAM