Koo, Hyun Cheol Kim, Seong Been Kim, Hansung Park, Tae-Eon Choi, Jun Woo Kim, Kyoung-Whan Go, Gyungchoon Oh, Jung Hyun Lee, Dong-Kyu Park, Eun-Sang Hong, Ik-Sun Lee, Kyung-Jin 2024-01-19T16:02:56Z 2024-01-19T16:02:56Z 2021-09-02 2020-12 0935-9648 https://pubs.kist.re.kr/handle/201004/117801 Exploiting spin transport increases the functionality of electronic devices and enables such devices to overcome physical limitations related to speed and power. Utilizing the Rashba effect at the interface of heterostructures provides promising opportunities toward the development of high-performance devices because it enables electrical control of the spin information. Herein, the focus is mainly on progress related to the two most compelling devices that exploit the Rashba effect: spin transistors and spin-orbit torque devices. For spin field-effect transistors, the gate-voltage manipulation of the Rashba effect and subsequent control of the spin precession are discussed, including for all-electric spin field-effect transistors. For spin-orbit torque devices, recent theories and experiments on interface-generated spin current are discussed. The future directions of manipulating the Rashba effect to realize fully integrated spin logic and memory devices are also discussed. English WILEY-V C H VERLAG GMBH SPIN-ORBIT-TORQUE ELECTRIC-FIELD CONTROL PERPENDICULAR MAGNETIZATION ATOMIC LAYERS ANISOTROPY DYNAMICS SURFACE MAGNETISM DRIVEN LOGIC Rashba Effect in Functional Spintronic Devices Article 10.1002/adma.202002117 1 ADVANCED MATERIALS, v.32, no.51 ADVANCED MATERIALS 32 51 scie scopus 000570111200001 2-s2.0-85090935970 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article SPIN-ORBIT-TORQUE ELECTRIC-FIELD CONTROL PERPENDICULAR MAGNETIZATION ATOMIC LAYERS ANISOTROPY DYNAMICS SURFACE MAGNETISM DRIVEN LOGIC Rashba effect spin memory spin precession spin transistors spin-orbit torque