Jeon, Jihoon Lee, Duk Hyun Kim, Yeon Soo Chung, Hyun-Jong Jhang, Sung Ho Kwon, Yongkyung Lee, Suyoun Park, Bae Ho 2024-01-19T16:03:18Z 2024-01-19T16:03:18Z 2021-09-02 2020-11-25 1944-8244 https://pubs.kist.re.kr/handle/201004/117823 Temperature-independent magnetoresistance (TIMR) has been studied for applications in magnetic field sensors operating in wide temperature ranges. Graphene is considered as one of the best candidates for achieving nonsaturating and large TIMR through engineering disorders. Nevertheless, large TIMR has not been achieved in disordered graphene with intrinsic defects, such as chemical doping and atomic dislocations. In this work, by introducing extrinsic defects, we realize nonsaturating and large TIMR in monolayer graphene transferred on a BiFeO3 nanoisland array (G/BFO-NIA). Furthermore, the G/BFO-NIA device exhibits a significantly larger MR (similar to 250% under 9 T) than other materials without gating operation, demonstrating its application feasibility. It is shown that the large MR is a result of the coexistence of electrons and holes with almost the same density, and the observed TIMR originates from the temperature dependence of carrier transport in graphene and of the dielectric property of BFO-NIA. English American Chemical Society Large Temperature-Independent Magnetoresistance without Gating Operation in Monolayer Graphene Article 10.1021/acsami.0c16083 1 ACS Applied Materials & Interfaces, v.12, no.47, pp.53134 - 53140 ACS Applied Materials & Interfaces 12 47 53134 53140 scie scopus 000595547400089 2-s2.0-85096644397 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article temperature-independent magnetoresistance disorder graphene BiFeO3 nano-island array without gating