Pham, Anh-Tuan Vu, Thi Hoa Cheng, Chang Trinh, Thi Ly Lee, Ji-Eun Ryu, Hyejin Hwang, Choongyu Mo, Sung-Kwan Kim, Jungdae Zhao, Li-dong Duong, Anh-Tuan Cho, Sunglae 2024-01-19T16:03:23Z 2024-01-19T16:03:23Z 2021-09-02 2020-11 2574-0962 https://pubs.kist.re.kr/handle/201004/117829 High-quality SnSe2 single crystals were successfully synthesized using a temperature gradient method. N-type characteristics and strong anisotropic transport properties of SnSe2 single crystals were exhibited between the ab plane and the c-axis. At 673 K, the power factor (PF) value along the ab plane is 3.43 mu W cm(-1) K-2, while it is 0.92 mu W cm(-1) K-2 along the c-axis. The ratio between thermal conductivities along the ab plane (K, b ) and c-axis (kappa(c)) is on the order of 7.6 at 300 K, while this value is about 5.6 at 673 K. The thermoelectric figure of merit (ZT) in the c-axis (0.15) is higher than that (0.1) along the ab plane, according to the ultralow out-of-plane thermal conductivity. The electronic band structure results, which were examined by angle-resolved photoemission spectroscopy (ARPES) predicted the potential of improving the thermoelectric performance of SnSe 2 single crystals by electron doping. English AMER CHEMICAL SOC High-Quality SnSe2 Single Crystals: Electronic and Thermoelectric Properties Article 10.1021/acsaem.0c01846 1 ACS Applied Energy Materials, v.3, no.11, pp.10787 - 10792 ACS Applied Energy Materials 3 11 10787 10792 N scie scopus 000595488500054 2-s2.0-85098162181 Chemistry, Physical Energy & Fuels Materials Science, Multidisciplinary Chemistry Energy & Fuels Materials Science Article thermoelectric material single crystal SnSe2 ultralow thermal conductivity ARPES