Lee, Hyo Seok Cho, Jae Yu Nandi, Raju Pawar, Pravin S. Neerugatti, KrishnaRao Eswar Mai, Cuc Thi Kim Lee, Doh-Kwon Heo, Jaeyeong 2024-01-19T16:03:26Z 2024-01-19T16:03:26Z 2021-09-02 2020-11-23 2574-0962 https://pubs.kist.re.kr/handle/201004/117832 The effect of the temperature ramping rate of vapor transport deposition (VTD) on the morphology, crystallinity, and orientation of SnS-absorber layers and their impact on SnS/CdS heterojunction thin-film solar cells (TFSCs) has been investigated. The SnS-absorber layers were deposited on SLG/Mo by using the VTD process at an evaporation temperature of 600 degrees C achieved by different temperature ramping rates ranging from 5 to 20 degrees C min(-1). The SnSabsorber layers deposited at a low temperature ramping rate of 5 degrees C min(-1) displayed a nonuniform size distribution of crystallites with a (111) preferred orientation. An increase in the temperature ramping rate to 20 degrees C min(-1) led to a densely packed morphology with pronounced (120)-oriented films and a more uniformly distributed grains. Furthermore, this improvement in the morphology and orientation of SnS absorbers resulted in a pronounced improvement in the diode characteristics of the heterojunction TFSC with device configuration of SLG/Mo/SnS/CdS/i-ZnO/Al-doped ZnO/Al, as revealed by current density-voltage analysis conducted under dark conditions. Consequently, the power conversion efficiency of the solar cells (active area = 0.3 cm(2)) was increased to 3.98% together with an open-circuit voltage of 0.34 V, short-circuit current density of 20.16 mA cm(-2), and fill factor of 0.58 for the TFSC fabricated with the SnS-absorber layers deposited at an elevated temperature ramping rate of 20 degrees C min(-1) compared with 2.45% for the absorber layer deposited at a ramping rate of 5 degrees C min(-1) The enhanced device performance was essentially attributed to the remarkably improved fill factor arising from the improved shunt properties of the SnS absorber. English AMER CHEMICAL SOC Influence of the Temperature Ramping Rate on the Performance of Vapor Transport Deposited SnS Thin-Film Solar Cells Article 10.1021/acsaem.0c01164 1 ACS APPLIED ENERGY MATERIALS, v.3, no.11, pp.10393 - 10401 ACS APPLIED ENERGY MATERIALS 3 11 10393 10401 scie scopus 000595488500013 2-s2.0-85098111995 Chemistry, Physical Energy & Fuels Materials Science, Multidisciplinary Chemistry Energy & Fuels Materials Science Article tin monosulfide vapor transport deposition temperature ramping rate thin-film solar cells efficiency