Rathod, Kunalsinh N. Gadani, Keval Dhruv, Davit Shrimali, Vipul G. Solanki, Sapana Joshi, Ashvini D. Singh, Jitendra P. Chae, Keun H. Asokan, Kandasami Solanki, Piyush S. Shah, Nikesh A. 2024-01-19T16:04:13Z 2024-01-19T16:04:13Z 2022-01-11 2020-11 1071-1023 https://pubs.kist.re.kr/handle/201004/117877 In this study, we investigate the effect of ion irradiation on Y0.95Ca0.05MnO3 (YCMO) thin films. X-ray diffraction and Raman spectroscopy measurements show single-phase and strain/stress modifications with ion irradiation. Rutherford backscattering spectrometry confirms the variation in oxygen vacancies. The near-edge x-ray absorption fine structure shows valence state reduction of Mn ions, which is attributed to oxygen vacancies. The optimal resistive switching ratio is observed at the lowest fluence (1x10(11)ions/cm(2)) of ion irradiation. At higher fluences (1x10(12) and 1x10(13)ions/cm(2)), the strain relaxation and oxygen vacancy annihilation are ascribed to the local annealing effect. The double logarithmic curve and modified Langmuir-Child's law satisfy the space charge limited conduction mechanism in all thin films. These results suggest the crucial role of irradiation-induced oxygen vacancies in modifying the electronic structure and electrical properties of YCMO thin films. English A V S AMER INST PHYSICS VOLTAGE CHARACTERISTICS DOMAIN-WALLS Effect of oxygen vacancy gradient on ion-irradiated Ca-doped YMnO3 thin films Article 10.1116/6.0000507 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.38, no.6 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 38 6 scie scopus 000590770000002 2-s2.0-85096110869 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Physics, Applied Engineering Science & Technology - Other Topics Physics Article VOLTAGE CHARACTERISTICS DOMAIN-WALLS