Lee, J Han, IK Choi, WJ Brini, J Chovet, A 2024-01-19T16:08:54Z 2024-01-19T16:08:54Z 2022-03-07 2001 0277-786X https://pubs.kist.re.kr/handle/201004/117913 A new model for electrical low frequency noise in semiconductor heterostructure laser diodes is developed based on number fluctuation theory. The model includes carrier number fluctuation mechanisms such as thermal activation, tunneling and random walk involving bulk traps and interface traps at the heterojunction interface. Noise sources in heterostructure semiconductor laser diodes can be divided into three parts, namely, series resistance including ohmic contacts, p-n junction and the heterojunction. The traps located at the interface and or at the bulk of the barrier layer can induce the modulation of barrier height which in turn results in the current fluctuation. Noise generation mechanisms for p-n junction is reviewed. Correlation between electrical and optical noise is also discussed. English SPIE-INT SOC OPTICAL ENGINEERING 1/f noise in semiconductor heterostructure laser diodes Conference 10.1117/12.444683 1 Conference on Advances in Microelectronic Device Technology, v.4600, pp.34 - 42 Conference on Advances in Microelectronic Device Technology 4600 34 42 US NANJING, PEOPLES R CHINA 2001-11-07 ADVANCES IN MICROELECTRONIC DEVICE TECHNOLOGY 000174067300005 2-s2.0-0035769150 Proceedings Paper