Jeon, Dae-Young Mouis, Mireille Barraud, Sylvain Ghibaudo, Gerard 2024-01-19T16:30:36Z 2024-01-19T16:30:36Z 2021-09-02 2020-11 0018-9383 https://pubs.kist.re.kr/handle/201004/117949 Substrate-bias-affected unique electrical characteristics of junctionless transistors (JLTs) were investigated in detail. Bulk channel thickness of JLTs (t(si_ eff)) was effectively modulated by back-gate bias (V-gb). The variation in threshold voltage (V-th) and mobility degradation were observed in the reduced t(si_eff), due to the negative V-gb-induced depletion of free electrons. The V-gb effect was also influenced significantly by the doping concentration in JLTs. In addition, numerical simulations verified those results and analytical equations explained well the experimental results. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC NANOWIRE TRANSISTORS MOBILITY WIDTH Controlling the Effective Channel Thickness of Junctionless Transistors by Substrate Bias Article 10.1109/TED.2020.3020284 1 IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.11, pp.4736 - 4740 IEEE TRANSACTIONS ON ELECTRON DEVICES 67 11 4736 4740 scie scopus 000584285700038 2-s2.0-85095713456 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article NANOWIRE TRANSISTORS MOBILITY WIDTH Analytical equations effective channel thickness (t(si_eff)) junctionless transistors (JLTs) mobility degradation numerical simulation substrate bias variation in threshold voltage