Kim, Hansung Park, Hee Gyum Min, Byoung-Chul Han, Suk Hee Chang, Joonyeon Kim, Hyung-jun Koo, Hyun Cheol 2024-01-19T16:30:41Z 2024-01-19T16:30:41Z 2021-09-02 2020-11 1567-1739 https://pubs.kist.re.kr/handle/201004/117954 A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintmnics due to the longer spin diffusion. By utilizing optimal temperature process and VIII flux ratio control, the GaAs layer is grown without a serious defect. In a ferromagnet/semiconductor hybrid device, Tb20Fe62Co18/Ru/Co40Fe40B20 films are deposited on the GaAs (110) channel as a spin source to investigate the spin transport in (110)-oriented channel. To measure the Hanle signal, an in-plane magnetic field is applied to the perpendicularly polarized spins which are injected from the Th20Fe62Co18 layer. From the experimental results, the spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by up to 25%. The proper selection of crystalline growth direction for the spin transport channel is a viable solution for an efficient spin transport. English ELSEVIER Electrical spin transport in a GaAs (110) channel Article 10.1016/j.cap.2020.08.009 1 CURRENT APPLIED PHYSICS, v.20, no.11, pp.1295 - 1298 CURRENT APPLIED PHYSICS 20 11 1295 1298 scie scopus kci ART002647970 000577638600015 2-s2.0-85091257229 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article PRECESSION GaAs (110) Hanle effect Spin diffusion length Spin injection Tb20Fe62Co18